Ballistic metal‐oxide‐semiconductor field effect transistor
نویسندگان
چکیده
منابع مشابه
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistor
We investigate the properties of ballistic fin-structured silicon spin field-effect transistors. The spin transistor suggested first by Datta and Das employs spin-orbit coupling to introduce the current modulation. The major contribution to the spin-orbit interaction in silicon films is of the Dresselhaus type due to the interface-induced inversion symmetry breaking. The subband structure in si...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1994
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.357263